Title :
Amorphous and microcrystalline silicon films deposited by hot wire cell method: application to silicon based thin film solar cells
Author :
Ide, Y. ; Asakusa, K. ; Zhao, Y. ; Yamada, A. ; Konagai, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Hot Wire Cell method has been developed in order to grow a-Si and μc-Si thin films with relatively high growth rates of 0.4-3.0 nm/s at a low substrate temperature of about 200°C. It was found that the peak at 2100 cm-1 which originates from Si-H, bonding in the infrared absorption spectra could be dramatically reduced at a low deposition pressure of 10 mTorr. Besides, it was found by SIMS analysis that the concentrations of O and C atoms could be reduced to the order of 1018 cm-3 for a-Si and 1020 cm-1 for μc-Si, respectively, at low deposition pressures of 3-10 mTorr. The conversion efficiency of 7.5% and 3.3% were achieved for superstrate-type a-Si and μc-Si solar cells with the deposition rate of 0.4-0.5 nm/s under AM1.5 insulation, respectively.
Keywords :
CVD coatings; amorphous semiconductors; elemental semiconductors; infrared spectra; secondary ion mass spectra; semiconductor growth; semiconductor thin films; silicon; solar cells; μc-Si thin films; 10 mtorr; 200 degC; 2100 cm-1; 3 to 10 mtorr; 3.3 percent; 7.5 percent; SIMS; Si:H; a-Si based thin film solar cells; conversion efficiency; hot wire cell method; infrared absorption spectra; low substrate temperature; relatively high growth rates; Amorphous materials; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Transistors; Wire;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190813
