• DocumentCode
    3346212
  • Title

    Effects of mechanical strain on the performance of amorphous silicon triple-junction solar cells

  • Author

    Jones, Rebecca ; Johnson, Todd ; Jordan, William ; Wagner, Sigurd ; Yang, Jeffrey ; Guha, Subhendu

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    1214
  • Lastpage
    1217
  • Abstract
    Amorphous silicon triple-junction solar cells were tested in tension and compression. The production cells had the structure: stainless steel (125 μm)/Al/ZnO/n1i1p1n2i2p2n3i3p3/ITO/grid, where i1 and i2 are a-SiGe:H and i3 is a-Si:H. We bent the solar cells to strains as high as 2%. The I-V characteristics of the cells were tested before, during and after bending. We found that there was little deterioration in cell performance under compression up to 1.7% strain, which is the physical limit of our experiment. In tension, some cell characteristics began to degrade at strains of 0.75%. Plastic deformation was observed at strains of 0.2% and higher.
  • Keywords
    amorphous semiconductors; bending; elemental semiconductors; hydrogen; plastic deformation; semiconductor device measurement; silicon; solar cells; stress effects; 125 micron; Al; I-V characteristics; ITO; InSnO; Si; Si:H; SiGe:H; ZnO; amorphous silicon triple-junction solar cells; bending; compression; mechanical strain effects; performance; plastic deformation; stainless steel; tension; Amorphous silicon; Capacitive sensors; Degradation; Indium tin oxide; Photovoltaic cells; Plastics; Production; Steel; Testing; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190826
  • Filename
    1190826