Title :
Transparent conducting ZnO:Al films via CCVD for amorphous silicon solar cells
Author :
Zhao, Z. ; Vinson, M. ; Neumuller, T. ; McEntyre, J.E. ; Fortunato, F. ; Hunt, A.T. ; Ganguly, G.
Author_Institution :
MicroCoating Technol., Atlanta, GA, USA
Abstract :
Highly transparent conducting ZnO:Al films have been fabricated using the Combustion Chemical Vapor Deposition (CCVD) process. CCVD is an open atmosphere process and uses inexpensive precursors to produce thin films, which enables large-area deposition with high throughput at low cost. Structural, electrical, and optical properties of the films were characterized. Synthesized ZnO:Al films showed polycrystalline structure with a [002] textured orientation. Electro-optical and morphological properties were found to depend on process parameters such as solution concentration and flow rate, doping concentration, and annealing conditions. Tandem a-Si solar cells were made on ZnO:Al coated borosilicate glass substrates, and an efficiency of 9.4% has been demonstrated.
Keywords :
CVD coatings; II-VI semiconductors; aluminium; annealing; borosilicate glasses; crystal morphology; electro-optical effects; semiconductor thin films; solar cells; transparency; zinc compounds; (002) textured orientation; 9.4 percent; CCVD; ZnO:Al coated borosilicate glass substrates; annealing conditions; combustion chemical vapor deposition; doping concentration; efficiency; electrical properties; electro-optical properties; flow rate; high throughput at low cost; large-area deposition; morphological properties; optical properties; polycrystalline structure; process parameters; solution concentration; structural properties; tandem a-Si solar cells; transparent conducting ZnO:Al films; Amorphous silicon; Atmosphere; Chemical vapor deposition; Combustion; Conductive films; Optical films; Photovoltaic cells; Semiconductor films; Sputtering; Throughput;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190843
