DocumentCode :
3347168
Title :
Experimental evidence of the role of acoustic plasmons in carrier relaxation dynamics in bulk semiconductors
Author :
Lampin, J.F. ; Camescasse, F.X. ; Alexandrou, A. ; Bonitz, M.
Author_Institution :
Lab. d´Opt. Appliquee, Ecole Polytech., Palaiseau, France
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
89
Abstract :
Summary form only given. The relaxation of a nonequilibrium population in the presence of equilibrium carriers is a situation frequently encountered in devices. It is also interesting from the fundamental point of view since theoretical work has predicted the existence of weakly damped acoustic plasmons under nonequilibrium situations and their importance in accelerating the relaxation as well as a drastic dependence on the temperature of thermalized electrons existing in addition to a nonequilibrium electron-hole plasma. However, no experimental investigation of acoustic-plasmon effects in nonequilibrium plasmas has been performed up to now. We here present the first experimental evidence for the role of acoustic plasmons by measuring the relaxation in the presence of hot or cold equilibrium carriers injected by a prepump in a 0.65-/spl mu/m GaAs layer. We use a nondegenerate pump-probe configuration that allows to follow selectively the thermalization of the nonequilibrium electron distribution.
Keywords :
III-V semiconductors; carrier relaxation time; gallium arsenide; hot carriers; plasmons; semiconductor plasma; 0.65 mum; GaAs; GaAs layer; acoustic plasmons; acoustic-plasmon effects; bulk semiconductors; carrier relaxation dynamics; cold equilibrium carriers; equilibrium carriers; hot equilibrium carriers; nondegenerate pump-probe configuration; nonequilibrium electron distribution; nonequilibrium electron-hole plasma; nonequilibrium plasmas; nonequilibrium population; nonequilibrium situations; prepump; relaxation; thermalization; thermalized electrons; weakly damped acoustic plasmons; Acceleration; Acoustic devices; Acoustic measurements; Electrons; Gallium arsenide; Plasma accelerators; Plasma measurements; Plasma temperature; Plasmons; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807344
Filename :
807344
Link To Document :
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