On the Reliability of Power Silicon Rectifier Diodes above the Maximum Permissible Operation Junction Temperature

I-V reverse electrical characteristics from investigated commercial standard recovery and fast recovery rectifier diodes are shown. Simple storage of device at temperature higher than 250degC to 300degC without applied power dissipation may lead to device failure. Many investigated commercial diodes when stored above 250 to 300degC exhibited unchanged electrical characteristics. Moreover storage at 225degC ambient temperature with 1000 V applied voltage revealed device survival for diode samples with significantly reduced leakage current in comparison with similar samples. Even storage at 250degC and 500 V applied voltage was possible without failure. It is anticipated that significant advance in the device manufacturing technology makes possible further reduction of the leakage reverse current level on behalf of its component flowing at the junction edge. Silicon rectifier diodes with maximum permissible operation temperature of 225degC up to 250degC without risk of failure, during operation at such specified values may be developed. To reach such values of the maximum permissible operation temperature a low as possible level of the reverse leakage current is required