DocumentCode :
3347653
Title :
Progress in the manufacture of ultra flat optics for very high concentration flat panels
Author :
Diaz, V. ; Alonso, J. ; Hernandez, M. ; Alvarez, J.L. ; Labrador, M. ; Blen, J. ; Mohedano, R. ; Benitez, P. ; Minano, J.C. ; Preuss, W. ; Gessenharter, A.
Author_Institution :
R&D Dept., ISOFOTON S.A., Malaga, Spain
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1580
Lastpage :
1583
Abstract :
A very high concentration in photovoltaics has been achieved using systems based on GaAs solar cells and TIR-R lens working at very high concentration of incident light (1000/spl times/). The reasons for this renewed study is the potential for a drastic reduction of cost with concentration and the highly compact optics design suitable for flat panels. This paper deals with the design, manufacture and characterisation of the ultra-flat optics needed for collecting over the receiver, about 1000 Suns of concentrated sunlight. A description of the details related to the manufacturing of the moulds of the lens, plastic injection process and characterisation of the lens for achieving an acceptance angle (for 90% relative transmission) of /spl alpha/ = /spl plusmn/1.3/spl deg/, an optical efficiency (at /spl lambda/=630 nm) /spl eta//sub opt/ = 86.5% and a peak irradiance on cell surface (at 850 W/m/sup 2/) < 6000, is presented. The goal of this optics is a geometrical concentration of 1250/spl times/.
Keywords :
III-V semiconductors; gallium arsenide; lenses; light reflection; solar cell arrays; solar energy concentrators; sunlight; 630 nm; 86.5 percent; GaAs; GaAs solar cells; TIR-R concentrator; concentration flat panel; high concentration incident light; irradiance; optical efficiency; photovoltaics cell modules; plastic injection process; total internal reflection; ultra flat optics; Costs; Gallium arsenide; Geometrical optics; Lenses; Manufacturing processes; Optical design; Optical receivers; Photovoltaic cells; Pulp manufacturing; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Conference_Location :
New Orleans, LA, USA
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190916
Filename :
1190916
Link To Document :
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