• DocumentCode
    3347880
  • Title

    Probe test failure analysis of bond pad over active structure by modeling and experiment

  • Author

    Liu, Yong ; Desbiens, Don ; Irving, Scott ; Luk, Timwah ; Edborg, Scott ; Hahn, Dan ; Park, Steve

  • Author_Institution
    Fairchild Semicond. Corp., South Portland, ME, USA
  • fYear
    2005
  • fDate
    31 May-3 June 2005
  • Firstpage
    861
  • Abstract
    The framework of this paper is to develop a DOE study for different pad structures and probe over travel (OT) parameters for both modeling and experimental tests on a wafer with bond pads placed over active structures. In modeling, a nonlinear finite element contact model is developed for the probe tip surface and the bond pad surface. The relationship between probe tip force and probe over travel distance through the probe beam is analytically derived. Modeling gives the results with different OT, probe tip type with different diameters, probe tip probe scrub. The probe damage test is designed with different OT and different bond pad structures, damage is accessed versus the number of probe tip touchdowns. A DOE study combined with both modeling and experiment is conducted with different BPOA parameters. In addition, an equivalent comparison between probe damage and wire bonding is made to show how the probe test and wire bonding process can affect bond pad over active area structures.
  • Keywords
    design of experiments; failure analysis; finite element analysis; lead bonding; probes; BPOA parameters; active structure; bond pad surface; design of experiment; nonlinear finite element contact model; probe damage test; probe over travel; probe test failure analysis; probe tip force; probe tip surface; probe tip type; wire bonding; Atherosclerosis; Bonding processes; Contacts; Failure analysis; Probes; Semiconductor device modeling; Semiconductor device testing; US Department of Energy; Wafer bonding; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2005. Proceedings. 55th
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-8907-7
  • Type

    conf

  • DOI
    10.1109/ECTC.2005.1441373
  • Filename
    1441373