DocumentCode :
3347944
Title :
Ultrafast photo-induced absorption in one-dimensional perovskite copper oxides
Author :
Ogasawara, T. ; Motoyama, N. ; Eisaki, H. ; Uchida, S. ; Taguchi, Y. ; Tokura, Y. ; Kuwata-Gonokami, M.
Author_Institution :
Dept. of Appl. Phys., Tokyo Univ., Japan
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
119
Lastpage :
120
Abstract :
Summary form only given. The family of 3d transition metal oxide is known as strongly correlated electron systems, whose low energy properties are dominated by strong on-site Coulomb repulsion and Pauli´s exclusion principle. Typically, these systems are insulating with finite charge gap at a half filling of conduction band (Mott insulator). In contrast with the conventional band insulators, such as semiconductors, the electronic structure of the transition metal oxides is determined by the strong interaction of electrons themselves. Because of the strong correlation of spins and charges of such system, drastic change in the electronic and magnetic properties easily occurs by chemical doping, for instance the appearance of high-T/sub c/ superconductivity, and colossal magnetoresistance, etc. We report on the observation of efficient change of absorption in one-dimensional perovskite copper oxide Sr/sub 2/CuO/sub 3/ by femtosecond laser pulse.
Keywords :
colossal magnetoresistance; high-speed optical techniques; high-temperature superconductors; laser beam effects; light absorption; strongly correlated electron systems; strontium compounds; 3d transition metal oxide; Mott insulator; Pauli´s exclusion principle; Sr/sub 2/CuO/sub 3/; colossal magnetoresistance; conduction band; conventional band insulators; electronic structure; femtosecond laser pulse; finite charge gap; half filling; high-T/sub c/ superconductivity; low energy properties; magnetic properties; one-dimensional perovskite copper oxide; one-dimensional perovskite copper oxides; semiconductors; strong electron interaction; strong on-site Coulomb repulsion; strongly correlated electron systems; transition metal oxides; ultrafast photo-induced absorption; Absorption; Chemicals; Colossal magnetoresistance; Electrons; Filling; Insulation; Magnetic properties; Metal-insulator structures; Semiconductor device doping; Superconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807393
Filename :
807393
Link To Document :
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