Title :
Nonlinear optical properties of ion implanted silicon nanostructures in silica
Author :
Vijayalakshmi, S. ; Grebel, H. ; White, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
Summary form only given. Ion implantation is a known method for producing isolated nanoclusters in a given matrix. We have reported large nonlinear susceptibilities for ion implanted silicon in fused silica, 10/sup -7/ esu for 3-4 nm clusters at /spl lambda/=355 nm and 10/sup -6/ esu for 5-6 nm clusters at /spl lambda/=532 nm respectively. The correlation between wavelength and the cluster size in these samples prompted us to study the wavelength dependence of the nonlinear constants to better understand the number of photons involved in the nonlinear process. Based on new experiments for the 5-6 nm clusters described below, we propose that the nonlinearity originates as a result of two photon absorption process that is enhanced by a very short lived, size dependent transition.
Keywords :
ion implantation; nanostructured materials; nonlinear optics; particle size; silicon; two-photon processes; 3 to 4 nm; 355 nm; 5 to 6 nm; 532 nm; SiO/sub 2/:Si; cluster size; correlation; fused silica; ion implanted silicon; ion implanted silicon nanostructures; isolated nanoclusters; large nonlinear susceptibilities; nonlinear constants; nonlinear optical properties; nonlinear process; silica; two photon absorption process; very short lived size dependent transition; Electrons; Nanoparticles; Nanostructures; Nonlinear optics; Optical films; Optical scattering; Particle beam optics; Resonance; Silicon compounds; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807399
