Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

Author

Mu, Xihan ; Ding, Yujie J. ; Khurgin, Jacob B. ; Alt, K.W. ; Wang, K.L.

Author_Institution

Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

125

Lastpage

126

Abstract

Summary form only given. We report our results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs-AlGaAs QWs with low residual (undoped) impurity densities. Each photoluminescence (PL) spectrum consists of only the donor-acceptor pair (DAP) transition peak within the entire range of pump intensities. The sample was grown by molecular-beam epitaxy on a [100] semi-insulating n-type GaAs substrate.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical pumping; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line shift; 12 meV; GaAs-AlGaAs; GaAs-AlGaAs QWs; GaAs/AlGaAs coupled quantum wells; [100] semi-insulating n-type GaAs substrate; anomalously large blueshift; donor-acceptor pair transition peak; free-excitonic emission; irect observation; low residual impurity densities; molecular-beam epitaxy; photoluminescence spectrum; pump intensities; Digital audio players; Frequency conversion; Gallium arsenide; Impurities; Optical harmonic generation; Optical pulse generation; Optical pulses; Pulse compression methods; Pulse modulation; Pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807410

Filename

807410