Title :
Coherent phonons in doped semiconductors probed by THz radiation
Author :
Cho, G.C. ; Han, P.Y. ; Zhang, X.-C.
Author_Institution :
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Summary form only given. We present the highest radiation frequency, observed by far, emitted by coherent longitudinal optical (LO) phonons in III-V compound semiconductors. The results reveal the bare coherent phonon radiation in coexistence with background collective charge carrier oscillations in doped samples. We discuss differences in probing via THz radiation from the optical experiment scheme like time resolved reflectivity change.
Keywords :
high-speed optical techniques; phonons; reflectivity; submillimetre wave measurement; III-V compound semiconductors; THz radiation; background collective charge carrier oscillations; coherent longitudinal optical phonons; coherent phonon radiation; coherent phonons; doped semiconductors; highest radiation frequency; time resolved reflectivity change; Absorption; Acoustic materials; Damping; Delay effects; Frequency; Interference; Laser excitation; Nanocrystals; Phonons; Probes;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807477
