Title :
Effect of proton implantation on optically excited terahertz radiation from GaAs
Author :
Gong-Ru Lin ; Ci-Ling Pan
Author_Institution :
Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan
Abstract :
Summary form only given. Optically excited THz radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. Shen et al. have studied the THz radiation of nitrogen-implanted GaAs (GaAs:N/sup +/). Carrier dynamics of the LT-GaAs has also been studied via THz spectroscopy. In this work, we report the optically excited THz radiation from proton-bombarded GaAs (GaAs:H/sup +/). The different time-resolved THz fields radiating from GaAs:H/sup +/ and semi-insulating GaAs associated with their correlated mechanisms were primarily compared and elucidated.
Keywords :
gallium arsenide; high-speed optical techniques; hydrogen ions; ion implantation; protons; submillimetre wave generation; submillimetre wave spectra; GaAs; GaAs:H/sup +/; GaAs:N; GaAs:N/sup +/; LT-GaAs; THz spectroscopy; carrier dynamics; correlated mechanisms; damaged semiconductors; excited THz radiation; nitrogen-implanted GaAs; optically excited terahertz radiation; proton implantation; proton-bombarded GaAs; semi-insulating GaAs; surface properties; time-resolved THz fields; unbiased semiconductor; Acceleration; Gallium arsenide; Magnetic fields; Optical pulses; Optical pumping; Optical sensors; Optical surface waves; Polarization; Protons; Substrates;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807484
