Title :
Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric
Author :
Sharmin, Saima ; Sikder, Urmita ; Ul-Ferdous, Rifat ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this paper, we characterize the interface properties of In-rich In0.65Ga0.35As and In0.75Ga0.25As MOSFETs with ALD Al2O3 gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the Dit profile for In0.75Ga0.25As-channel compared to In0.65Ga0.35As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; indium compounds; ALD gate dielectric; Al2O3-InGaAs; donor-like traps; interface trap density; nMOSFET; quantum mechanical low frequency CV model; Aluminum oxide; Capacitance; Dielectrics; Indium gallium arsenide; Logic gates; MOSFETs; Mathematical model;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
DOI :
10.1109/NMDC.2010.5652388
