• DocumentCode
    3349375
  • Title

    Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric

  • Author

    Sharmin, Saima ; Sikder, Urmita ; Ul-Ferdous, Rifat ; Khosru, Quazi D M

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
  • fYear
    2010
  • fDate
    12-15 Oct. 2010
  • Firstpage
    352
  • Lastpage
    355
  • Abstract
    In this paper, we characterize the interface properties of In-rich In0.65Ga0.35As and In0.75Ga0.25As MOSFETs with ALD Al2O3 gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the Dit profile for In0.75Ga0.25As-channel compared to In0.65Ga0.35As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; indium compounds; ALD gate dielectric; Al2O3-InGaAs; donor-like traps; interface trap density; nMOSFET; quantum mechanical low frequency CV model; Aluminum oxide; Capacitance; Dielectrics; Indium gallium arsenide; Logic gates; MOSFETs; Mathematical model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-8896-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2010.5652388
  • Filename
    5652388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3349375