Electromodulated third harmonic generation: a new window on surface /spl chi//sup (4)/

Author

Wilson, P.T. ; Kempf, R.W. ; Downer, M.C. ; Aktsipetrov, O.A. ; Mishina, E.D.

Author_Institution

Dept. of Phys., Texas Univ., Austin, TX, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

181

Lastpage

182

Abstract

Summary form only given. Recently, amplified femtosecond TkSapphire lasers enabled the observation of fourth harmonic generation (FHG) from crystalline surfaces of noncentrosymmetric (GaAs(001)) and centrosymmetric (Si(OO1)) semiconductors below the damage threshold.

Keywords

MOS capacitors; electro-optical modulation; elemental semiconductors; nonlinear optical susceptibility; optical harmonic generation; semiconductor-insulator boundaries; silicon; silicon compounds; DC electric field induced higher harmonics; Si(111)/SiO/sub 2/ interface; Si-SiO/sub 2/; Si-SiO/sub 2/-Cr; anisotropic properties; azimuthal sample rotation; electromodulated third harmonic generation; fourth harmonic generation; n-Si(111)/SiO/sub 2//Cr MOS capacitors; surface fourth order susceptibility; surface specific probe; surface symmetry; Anisotropic magnetoresistance; Crystallization; Electric variables measurement; Frequency conversion; MOS capacitors; Rotation measurement; Semiconductor lasers; Surface emitting lasers; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807497

Filename

807497