Title :
Design and simulation of BiCMOS opamp
Author :
Ramanath, D. ; Hasan, M.M.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
Abstract :
A new design of opamp using 5 micron BiCMOS technology is presented. The SPICE simulation results show significant improvement in the performance such as 125 dB open-loop gain, 105 dB CMRR, 20 MHz of unity gain frequency with a phase margin of 65 degrees and 44 V/μs of slew rate. The opamp is expected to operate with ±5 V power supply voltage and the power dissipation is 24 mW
Keywords :
BiCMOS integrated circuits; SPICE; circuit analysis computing; operational amplifiers; -5 V; 125 dB; 24 mW; 5 V; 5 micron; BiCMOS opamp; SPICE simulation; monolithic IC; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Impedance; MOSFETs; Performance gain; Power supplies; Resistors; SPICE; Voltage;
Conference_Titel :
ASIC Conference and Exhibit, 1991. Proceedings., Fourth Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-0101-3
DOI :
10.1109/ASIC.1991.242858
