• DocumentCode
    3349789
  • Title

    Strained GaLnAs Quantum Well Lasers Grown By Molecular Beam Epitaxy For Improved Microwave Frequency Modulation Bandwidths

  • Author

    Schaff, W.J. ; Offsey, S.D. ; Lester, L.F. ; Eastman, L.F.

  • Author_Institution
    Cornell University
  • fYear
    1990
  • fDate
    4-9 Nov 1990
  • Firstpage
    465
  • Lastpage
    468
  • Keywords
    Bandwidth; Frequency modulation; Gallium arsenide; Masers; Microwave frequencies; Molecular beam epitaxial growth; Nanofabrication; Quantum mechanics; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
  • Print_ISBN
    0-87942-550-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1990.690644
  • Filename
    690644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3349789