DocumentCode :
3349789
Title :
Strained GaLnAs Quantum Well Lasers Grown By Molecular Beam Epitaxy For Improved Microwave Frequency Modulation Bandwidths
Author :
Schaff, W.J. ; Offsey, S.D. ; Lester, L.F. ; Eastman, L.F.
Author_Institution :
Cornell University
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
465
Lastpage :
468
Keywords :
Bandwidth; Frequency modulation; Gallium arsenide; Masers; Microwave frequencies; Molecular beam epitaxial growth; Nanofabrication; Quantum mechanics; Quantum well lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690644
Filename :
690644
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3349789
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