Title :
Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy
Author :
Hages, Charles J. ; Carter, Nathaniel J. ; Moore, James ; McLeod, Steven M. ; Miskin, Caleb K. ; Joglekar, Chinmay ; Lundstrom, Mark S. ; Agrawal, Rajeev
Author_Institution :
Sch. of Chem. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Capacitance spectroscopy has been used to compare charge carrier and defect properties of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells, with efficiencies reported here at 9.2% and 14.2%, respectively. Differences in energy level, frequency/temperature response, and contributions to bulk conductivity have been identified for the different materials. Due to these differences, contributions to the free carrier density have been associated with a single defect for CIGSSe, while associated with two defects in CZTSSe. Additionally, carrier freeze-out out at low temperatures has been identified for both devices, contributing to increasing series resistance at low temperatures as determined from the bulk conductivity. In addition to differences in defect formation, CZTSSe has been characterized with a reduced Vbi when compared to CIGSSe.
Keywords :
semiconductor thin films; solar cells; spectroscopy; ternary semiconductors; Cu(InGa)(SSe); CuZnSn(SSe); bulk conductivity; capacitance spectroscopy; carrier freeze-out; charge carrier; defect properties; earth-abundant thin-film solar cells; free carrier density; frequency-temperature response; nanocrystal-ink CIGSSe solar cells; nanocrystal-ink based CZTSSe solar cells; series resistance; Capacitance; Capacitance measurement; Materials; Photovoltaic cells; Resistance; Spectroscopy; Temperature measurement; CIGSSe; CZTSSe; admittance; capacitance measurement; charge carriers; nanocrystals; thin-film solar cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744856
