Title :
Generation of hole traps in silicon dioxides
Author :
Zhang, J.F. ; Sii, H.K. ; Groeseneken, G. ; Degraeve, R.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., UK
Abstract :
Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron trap generation, while little information is available on hole trap generation. This paper unambiguously shows that a significant amount of hole traps can be created
Keywords :
CMOS integrated circuits; electric breakdown; hole traps; integrated circuit reliability; integrated circuit testing; CMOS technology; SiO2-Si; breakdown; defect generation; electron trap generation; hole trap generation; hole traps; oxide breakdown; silicon dioxides; CMOS technology; Charge carrier processes; Electric breakdown; Electron traps; Hot carriers; Interface states; Silicon; Substrate hot electron injection; Testing; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the
Print_ISBN :
0-7803-6675-1
DOI :
10.1109/IPFA.2001.941453
