• DocumentCode
    3350034
  • Title

    Generation of hole traps in silicon dioxides

  • Author

    Zhang, J.F. ; Sii, H.K. ; Groeseneken, G. ; Degraeve, R.

  • Author_Institution
    Sch. of Eng., Liverpool John Moores Univ., UK
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    50
  • Lastpage
    54
  • Abstract
    Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron trap generation, while little information is available on hole trap generation. This paper unambiguously shows that a significant amount of hole traps can be created
  • Keywords
    CMOS integrated circuits; electric breakdown; hole traps; integrated circuit reliability; integrated circuit testing; CMOS technology; SiO2-Si; breakdown; defect generation; electron trap generation; hole trap generation; hole traps; oxide breakdown; silicon dioxides; CMOS technology; Charge carrier processes; Electric breakdown; Electron traps; Hot carriers; Interface states; Silicon; Substrate hot electron injection; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the
  • Print_ISBN
    0-7803-6675-1
  • Type

    conf

  • DOI
    10.1109/IPFA.2001.941453
  • Filename
    941453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3350034