Application of focused ion beam system as a defect localization and root cause analysis tool

Author

Ooi, C.C. ; Siek, K.H. ; Sim, K.S.

Author_Institution

Intel Technol. Sdn. Bhd., Penang, Malaysia

fYear

2001

fDate

2001

Firstpage

112

Lastpage

116

Abstract

The focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects after electrical fault isolation. In the highly competitive and challenging environment prevalent at present, failure analysis throughput time is of utmost important. Therefore, a quick, efficient and reliable physical failure analysis technique is needed. This paper discusses the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis

Keywords

failure analysis; fault location; focused ion beam technology; integrated circuit reliability; integrated circuit testing; ion beam effects; FIB; critical failure analysis tool; defect localization; electrical fault isolation; failure analysis; failure analysis throughput time; focused ion beam system; microprocessor technology; passive charge contrast technique; pattern FIB analysis; physical defects; reliable physical failure analysis technique; root cause analysis tool; root cause determination tool; Circuit faults; Failure analysis; Focusing; Integrated circuit interconnections; Ion beams; Isolation technology; Microprocessors; Sputtering; Substrates; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941466

Filename

941466