Title :
Unique measurement to monitor the gate oxide lifetime indicator, case studies
Author :
Gagnard, X. ; Bonnaud, O.
Author_Institution :
STMicroelectronics, Rennes, France
Abstract :
Previous works (Gagnard and Bonnaud, Microelectron. Reliability vol. 39, pp. 75-763, 1999, and Proc. SPIE vol. 4182, pp. 142-50, 2000) demonstrated the possibility of realization of the gate oxide lifetime by a unique measurement based on leakage current. This indicator, easy to implement and able to decrease the test time, can be included in the routine of parametric tests. This work confirms the validity of this indicator and presents case studies related to BCD technology
Keywords :
BIMOS integrated circuits; dielectric thin films; electric current measurement; integrated circuit measurement; integrated circuit reliability; leakage currents; life testing; BCD technology; SiO2-Si; gate oxide lifetime; gate oxide lifetime indicator; gate oxide lifetime monitoring; leakage current measurement; parametric test routine; test time; Computer aided software engineering; Current measurement; Electric breakdown; Equations; Monitoring; Qualifications; Semiconductor device modeling; Stress; Testing; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the
Print_ISBN :
0-7803-6675-1
DOI :
10.1109/IPFA.2001.941476
