Plasma damage in floating metal-insulator-metal capacitors

Author

Ackaert, Jan ; Wang, Zhichun ; De Backer, E. ; Coppens, P.

Author_Institution

Alcatel Microelectron., Oudenaarde, Belgium

fYear

2001

fDate

2001

Firstpage

224

Lastpage

227

Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects

Keywords

BiCMOS integrated circuits; MIM devices; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma materials processing; surface charging; thin film capacitors; BiCMOS chip; CID; MIMC damage; MIMC plates; MIMCs; capacitor plates; charging induced damage; direct yield loss; exposed antenna area ratio; floating metal-insulator-metal capacitors; latent damage; logarithmic relation; long interconnects; metal-insulator-metal capacitors; plasma damage; reliability losses; voltage potential; voltage potential difference build-up; Breakdown voltage; Dielectrics and electrical insulation; Failure analysis; Integrated circuit interconnections; MIM capacitors; MOS capacitors; Metal-insulator structures; Microelectronics; Plasmas; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941491

Filename

941491