Title :
InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
Author :
Fresina, M.T. ; Hartmann, Q.J. ; Thomas, S. ; Ahmari, D.A. ; Caruth, D. ; Feng, M. ; Stillman, G.E.
Author_Institution :
150 Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; HBT; III-V semiconductors; InGaP-GaAs; emitter ledge fabrication; gain; high-frequency performance; layer structure; selective wet chemical etch process; self-aligned ledges; small-area devices; Chemical processes; Dielectrics; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Microelectronics; Resists; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553569
