DocumentCode
3350649
Title
Oriented growth of ferroelectric thin films in an in situ applied low electric field
Author
Hu, U.S. ; Liu, Z.G. ; Feng, D.
Author_Institution
Nat. Lab. of Solid State Microstructures, Nanjing Univ., China
fYear
1996
fDate
25-30 Sep 1996
Firstpage
635
Lastpage
640
Abstract
We have theoretically investigated the oriented growth of ferroelectric thin films on substrates without lattice match by applying a low electric field during deposition. Several kinds of electrode geometry were proposed. The growth mechanism was interpreted in accordance with the electrostatic energy of ferroelectrics in electric field and compared with the poling of polycrystalline ceramics. Two criterions were derived to select ferroelectrics suiting low electric field induced oriented growth
Keywords
ceramics; dielectric polarisation; electric field effects; ferroelectric thin films; vapour deposition; deposition; electrode geometry; electrostatic energy; ferroelectric thin films; growth mechanism; in situ applied low electric field; low electric field induced oriented growth; oriented growth; poling; polycrystalline ceramics; substrates; Electrodes; Electrostatics; Equations; Ferroelectric films; Ferroelectric materials; Iron; Optical waveguides; Pyroelectricity; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578182
Filename
578182
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