Title :
Modeling of switching response of small diameter nanowire field effect transistors
Author :
Morusupalli, Subrahmanya P. ; Verma, Amit ; Basavaraju, Shreyas ; Buin, Andrei K. ; Nekovei, Reza
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
We report on a comprehensive modeling of small diameter (<; 4 nm) nanowire field effect transistors as switches. The SPICE simulation of the transistor takes data from device and material simulations, and therefore allows for significant flexibility in tool development for nano-devices and circuits. Device simulations involve solving self-consistently the drift-diffusion equation, with Gauss Law in integral form for the electrostatics of the device structure.
Keywords :
SPICE; elemental semiconductors; field effect transistor switches; nanowires; semiconductor device models; silicon; Gauss Law; SPICE simulation; Si; device simulation; drift-diffusion equation; electrostatics; material simulation; nanodevice; small diameter nanowire field effect transistor; switch; switching response; FETs; Integrated circuit modeling; Logic gates; Mathematical model; Nanoscale devices; Silicon; Silicon nanowires; switching response;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
DOI :
10.1109/NMDC.2010.5652474
