Title :
A 0.1-/spl mu/m self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultra-high-speed ICs
Author :
Tokumitsu, M. ; Hirano, M. ; Otsuji, T. ; Yamaguchi, S. ; Yamasaki, K.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
We have developed the technologies to fabricate about 0.1-/spl mu/m-gate-length GaAs MESFETs with a multilayer interconnection structure. We fabricated excellent high-frequency performance of a 0.06-/spl mu/m-gate-length MESFET having current-gain cutoff frequency (f/sub T/) of 168 GHz. Using 0.13-/spl mu/m-gate-length MESFETs, we also fabricated an ultra-high-speed decision circuit operating up to 32 Gbit/s.
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; decision circuits; gallium arsenide; integrated circuit interconnections; 0.1 micron; 168 GHz; 32 Gbit/s; GaAs; current-gain cutoff frequency; decision circuit; fabrication; multilayer interconnection; self-aligned-gate GaAs MESFET; ultra-high-speed IC; Electrodes; Etching; FETs; Gallium arsenide; Gold; Integrated circuit interconnections; MESFET circuits; Microwave Theory and Techniques Society; Nonhomogeneous media; Polyimides;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553570
