• DocumentCode
    3350988
  • Title

    Performance investigation for a silicon nanowire FET biosensor using numerical simulation

  • Author

    Wang, Yucai ; Li, Guangyong

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Pittsburgh, Pittsburgh, PA, USA
  • fYear
    2010
  • fDate
    12-15 Oct. 2010
  • Firstpage
    81
  • Lastpage
    86
  • Abstract
    Silcion field-effect transistor (SiNW FET) biosensors have recently been demonstrated experimentally for direct, label free, high sensitive, high selective and real time detection of DNA and proteins at very low concentration. Among these experiments, the detection of Biotin/Streptavidin binding is of special interest since the biotin/ Streptavidin system exhibits the strongest noncovalent biological interaction known and is widely demonstrated as a model system to study biorecognition between proteins and other biomolecules. In this paper, a comprehensive modeling theory and simulation approach is presented to account for the underlying detection mechanism of biotin/Streptavidin binding using SiNW FET biosensor. The influence of parameters like the dimension of the SiNW, the doping of the SiNW, and surrounding environment are investigated for the performance optimization of the SiNW FET biosensor. The preliminary simulation results indicate that the optimal sensor performance can be ensured by careful optimization of its parameters and it is feasible to detect binding of single streptavidin molecule when optimal parameters are chosen.
  • Keywords
    DNA; biosensors; field effect transistors; molecular biophysics; nanowires; optimisation; performance evaluation; proteins; silicon; DNA; biomolecules; biorecognition; biosensor; biotin-streptavid binding; field effect transistor; noncovalent biological interaction; optimization; performance evaluation; proteins; real time detection; silicon nanowire FET; Biosensors; Doping; Electric potential; FETs; Logic gates; Mathematical model; Silicon; Biosensor; Biotin/Streptavid binding; Silicon nanowire FET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-8896-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2010.5652491
  • Filename
    5652491