DocumentCode :
3351094
Title :
Room-temperature CW Operation Of GaAs/AlGaAs Diode Lasers Grown An Sificon-on-insulator Wafers
Author :
Choi, H.K. ; Wang, C.A. ; Karam, N.H.
Author_Institution :
Massachusetts Institute of Technology
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
490
Lastpage :
491
Keywords :
Diode lasers; Gallium arsenide; Life testing; Materials testing; Optical materials; Photoluminescence; System testing; Temperature; Thermal resistance; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690652
Filename :
690652
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3351094
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