SiC electronics

Author

Agarwal, A.K. ; Augustine, G. ; Balakrishna, V. ; Brandt, C.D. ; Burk, A.A. ; Li-Shu Chen ; Clarke, R.C. ; Esker, P.M. ; Hobgood, H.M. ; Hopkins, R.H. ; Morse, A.W. ; Rowland, L.B. ; Seshadri, S. ; Siergiej, R.R. ; Smith, T.J., Jr. ; Sriram, S.

Author_Institution

Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

225

Lastpage

230

Abstract

Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the areas of microwave power devices, power electronic switching devices, high temperature analog and digital electronics, non-volatile memories and UV sensors. This paper presents an overview of SiC electronic properties, current status of the bulk and epitaxial material growth, and characteristics of the recently fabricated devices in some of the above device categories. The first application of silicon carbide in high power pulsed amplifiers at UHF and S-Band frequencies is described.

Keywords

semiconductor materials; silicon compounds; S-band; SiC; UHF; UV sensor; analog electronics; bulk growth; digital electronics; electronic properties; epitaxial growth; high power pulsed amplifier; high temperature electronics; microwave power device; nonvolatile memory; power electronic switching device; semiconductor material; silicon carbide; Gallium arsenide; Microwave devices; Nonvolatile memory; Power electronics; Power semiconductor switches; Pulse amplifiers; Semiconductor materials; Sensor phenomena and characterization; Silicon carbide; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553573

Filename

553573