Recent progress of crystal growth, conductivity control and light emitters of group III nitride semiconductors

Author

Akasaki, I. ; Amano, H.

Author_Institution

Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

231

Lastpage

237

Abstract

Recent progress in crystal growth and conductivity control of group III nitrides has enabled us to produce high-performance short wavelength light-emitting diodes. Room temperature operation of nitride-based laser diodes has also been realized. Today, steady progress is being made in the areas of crystal growth and fabrication of quantum well structures. However, many further advances are required in materials science and device fabrication of nitrides.

Keywords

III-V semiconductors; electrical conductivity; light emitting diodes; semiconductor growth; semiconductor lasers; semiconductor quantum wells; stimulated emission; vapour phase epitaxial growth; AlGaN; AlN; GaInN; GaN; InN; MOVPE; conductivity control; crystal growth; group III nitride semiconductors; heteroepitaxial growth; laser action; light emitters; nitride-based laser diodes; quantum well structures; room temperature operation; short wavelength light-emitting diodes; stimulated emission; Conducting materials; Crystallization; Electrons; Gallium nitride; Light emitting diodes; Nitrogen; Optical device fabrication; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553574

Filename

553574