Title :
Time-resolved luminescence spectrum and radiation recombination progress in surface and core of porous silicon
Author :
Huy, Bui ; Phi Hoa Binb ; Pham Van Hoi ; Cao, Dao Tran ; Quan, Le
Author_Institution :
Inst. of Mater. Sci., Nat. Centre for Natural Sci. & Technol., Hanoi, Viet Nam
Abstract :
Time-resolved luminescence spectra (TRLS) of porous silicon (PS) in the delay time range of 10-9-10-6 s were investigated. The luminescence spectra include the blue zone with decay time of the order of nanoseconds and the red zone with longer decay time. Recombination mechanisms in the core and in the surface states were used to explain this experimental result. The existence of discrete peaks in the blue zone shows that the luminescence is due to nano-scale crystals
Keywords :
core levels; elemental semiconductors; photoluminescence; porous materials; radiative lifetimes; silicon; size effect; surface states; time resolved spectra; 1E-9 to 1E-6 s; 86 to 300 K; Si; blue zone; core states; decay time; delay time range; nano-scale crystals; porous Si; quantum size effect; radiation recombination; recombination mechanisms; red zone; surface states; time-resolved luminescence spectra; Crystalline materials; Delay effects; Luminescence; Materials science and technology; Photoluminescence; Potential well; Pulse measurements; Radiative recombination; Silicon; Time measurement;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578188
