Title :
Sub-10-fJ ECL/68-/spl mu/A 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO/sub 2/ isolation structure and a BPSG-refilled trench
Author :
Kondo, M. ; Oda, K. ; Ohue, E. ; Shimamoto, H. ; Tanabe, M. ; Onai, T. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO/sub 2/ isolation structure and a boro-phosphosilicate glass (BPSG)-refilled isolation trench are presented. The SiGe base and a poly-Si/SiGe base contact were formed by selective growth in a self-aligned manner. The transistors have a very small collector capacitance (below 1 fF) and exhibit a high maximum oscillation frequency (30-65 GHz) at low current (10-100 /spl mu/A). The power-delay product of an ECL ring oscillator is only 5.1 fJ/G for a 250-mV voltage swing. The maximum toggle frequency of a 1/8 static divider is 4.7 GHz at a switching current of 68 /spl mu/A/FF.
Keywords :
Ge-Si alloys; bipolar integrated circuits; delays; emitter-coupled logic; frequency dividers; isolation technology; microwave bipolar transistors; microwave frequency convertors; semiconductor materials; 1 fF; 1/8 static divider; 10 fJ; 10 to 100 muA; 30 to 65 GHz; 4.7 GHz; B2O3-P2O5-SiO2; BPSG; BPSG-refilled trench; ECL ring oscillator; Gummel plot; Si-SiGe; SiO/sub 2/; collector capacitance; low current; maximum oscillation frequency; maximum toggle frequency; poly-Si/SiGe base contact; power dissipation; power-delay product; self-aligned selective growth; switching current; ultra-low-power SiGe base bipolar transistors; wedge-shaped CVD-SiO/sub 2/ isolation structure; Bipolar transistors; Circuits; Electrodes; Etching; Frequency; Germanium silicon alloys; Glass; Parasitic capacitance; Silicon germanium; Substrates;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553576
