Title :
Effect of substrate crystallinity on growth and optical properties of InP nanowires
Author :
Lohn, Andrew J. ; Kobayashi, Nobuhiko P.
Author_Institution :
Baskin Sch. of Eng., Univ. of California Santa Cruz, Santa Cruz, CA, USA
Abstract :
Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.
Keywords :
III-V semiconductors; MOCVD; elemental semiconductors; gallium arsenide; hydrogen; indium compounds; nanofabrication; semiconductor growth; semiconductor quantum wires; silicon; GaAs; InP; Si; Si:H; hydrogenated silicon template layer; indium phosphide nanowires; metalorganic chemical vapor deposition; nanowire growth; nanowire growth mechanisms; quartz substrate; substrate crystallinity effect; substrate surfaces; Indium phosphide; Mechanical factors; Nanowires; Optical device fabrication; Scanning electron microscopy; Silicon; Substrates; DTBP; GaAs; InP; MOCVD; Nanowire; Si; TBP; amorphous Si; phosphine;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
DOI :
10.1109/NMDC.2010.5652543
