Effect of substrate crystallinity on growth and optical properties of InP nanowires

Author

Lohn, Andrew J. ; Kobayashi, Nobuhiko P.

Author_Institution

Baskin Sch. of Eng., Univ. of California Santa Cruz, Santa Cruz, CA, USA

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

169

Lastpage

170

Abstract

Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.

Keywords

III-V semiconductors; MOCVD; elemental semiconductors; gallium arsenide; hydrogen; indium compounds; nanofabrication; semiconductor growth; semiconductor quantum wires; silicon; GaAs; InP; Si; Si:H; hydrogenated silicon template layer; indium phosphide nanowires; metalorganic chemical vapor deposition; nanowire growth; nanowire growth mechanisms; quartz substrate; substrate crystallinity effect; substrate surfaces; Indium phosphide; Mechanical factors; Nanowires; Optical device fabrication; Scanning electron microscopy; Silicon; Substrates; DTBP; GaAs; InP; MOCVD; Nanowire; Si; TBP; amorphous Si; phosphine;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652543

Filename

5652543