Title :
Physical properties of (Ba,Sr)TiO3 thin films used for integrated capacitors in microwave applications
Author :
Ayguavives, Tito ; Tombak, Ali ; Maria, Jon-Paul ; Stauf, Gregory T. ; Ragaglia, C. ; Roeder, Jeff ; Mortazawi, Amir ; Kingon, Angus I.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Recently, there has been significant interest in use of (Ba, Sr)TiO3 (BST) thin films for tunable high frequency (RF and microwave) components. In this paper we discuss the electrical properties of BST thin films gown by metalorganic chemical vapor deposition (MOCVD) as a function of DC bias and frequency at low frequency (<10 MHz) and high frequency (45 MHz - 18 GHz). Films display low losses (0.002 - 0.006) between 45 and 200 MHz and high tunability (> 50%) over the entire frequency range, making them suitable for these microwave applications. The effect of titanium content, thickness and Pt roughness on dielectric losses and tunability are discussed. Implications for microwave devices are discussed as well. Finally, we report the fabrication of a BST thin film device using a 3-layer mask set to measure electrical properties at RF/microwave frequencies
Keywords :
MOCVD coatings; barium compounds; dielectric losses; ferroelectric capacitors; ferroelectric thin films; microwave devices; strontium compounds; (BaSr)TiO3; 10 MHz; 45 MHz to 18 GHz; BST thin film; dielectric losses; dielectric tunability; electrical properties; integrated capacitor; metalorganic chemical vapor deposition; microwave device; Binary search trees; Chemical vapor deposition; Dielectric losses; Displays; MOCVD; Microwave devices; Radio frequency; Sputtering; Titanium; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941573
