Title :
Room temperature lasing action in an InGaN quantum dot laser under optical excitation
Author :
Tachibana, K. ; Someya, T. ; Arakawa, Yasuhiko ; Werner, R. ; Forchel, A.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
Summary form only given. We demonstrate the first lasing emission from an In/sub 0.2/Ga/sub 0.8/N quantum dot laser at room temperature. A clear threshold at excitation energy of 6.0 mJ/cm/sup 2/ was observed. Above the threshold, the emission was strongly TE polarized.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light polarisation; optical pumping; photoluminescence; quantum well lasers; semiconductor quantum dots; 293 to 298 K; In/sub 0.2/Ga/sub 0.8/N; In/sub 0.2/Ga/sub 0.8/N quantum dot laser; InGaN quantum dot laser; clear threshold; excitation energy; optical excitation; room temperature lasing action; strongly TE polarized emission; Chemical lasers; Gallium nitride; Laser excitation; Laser modes; Optical pumping; Pump lasers; Quantum dot lasers; Semiconductor lasers; Temperature measurement; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807673
