Title :
Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs
Author :
Joseph, A.J. ; Cressler, J.D. ; Richey, D.M. ; Harame, D.L.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
We present the first comprehensive investigation of the impact of Ge profile shape as well as the scaling of collector and base doping profiles on high-injection heterojunction barrier effects in advanced UHV/CVD SiGe HBTs over the temperature range of -73/spl deg/C to 85/spl deg/C. Results indicate that careful Ge profile design tailored with a proper collector profile design are required to push the barrier onset current density (J/sub C,barrier/) to well beyond the typical circuit operating point.
Keywords :
Ge-Si alloys; current density; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; secondary ion mass spectra; semiconductor doping; semiconductor materials; -73 to 85 C; Ge profile shape; SCORPIO simulation; SIMS profiles; Si-SiGe; UHV/CVD SiGe HBT; barrier onset current density; base doping profiles; collector doping profiles; high-injection barrier effects; microwave transistors; polysilicon emitter contact; profile scaling; Current density; Degradation; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Radio frequency; Shape; Silicon germanium; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553578
