Title :
Highly c-axis oriented AlN films deposited on LiNbO3 substrates for surface acoustic wave devices
Author :
Cheng, Chen-Chuan ; Kao, Kuo-Sheng ; Chen, Ying-Chung
Author_Institution :
Dept. of Electron. Eng., Sze-Hai Inst. of Technol. & Commerce, Taipei, Taiwan
Abstract :
Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO3 substrates by reactive rf magnetron sputtering. Growth behaviors of the AlN films deposited at various deposition conditions such as sputtering pressure, nitrogen concentration and substrate temperature were investigated. The crystalline orientation of the AlN film was determined by x-ray diffraction (XRD) which was sensitive to the deposition conditions. A dense pebble-like surface texture of c-axis oriented AlN film was obtained by scanning electron microscopy (SEM). The cross section of c-axis oriented AlN film showed a high degree of alignment of the columnar structure. A network analyzer was used to measure the surface acoustic wave (SAW) characteristics. The phase velocity and the electromechanical coupling coefficient were calculated to be about 4200 m/sec and 1.5%, respectively
Keywords :
X-ray diffraction; aluminium compounds; lithium compounds; piezoelectric thin films; scanning electron microscopy; sputtered coatings; surface acoustic wave devices; surface texture; AlN; AlN film; LiNbO3; LiNbO3 substrate; X-ray diffraction; c-axis orientation; columnar structure; electromechanical coupling coefficient; network analyzer; phase velocity; reactive RF magnetron sputtering; scanning electron microscopy; surface acoustic wave device; surface texture; Aluminum nitride; Crystallization; Nitrogen; Scanning electron microscopy; Sputtering; Substrates; Surface acoustic waves; Temperature sensors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941591
