Title :
Sol-gel processing SrTiO3 thin films for dynamic random access memory applications
Author :
Liu, Qing-feng ; Li, Xin-shan ; Meng, Zhong-yan
Author_Institution :
Sch. of Mater. Sci. & Technol., Shanghai Univ., China
Abstract :
Polycrystalline and crack-free strontium titanate (SrTiO3 ) thin films were deposited on silicon and quartz substrates by the sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600°C
Keywords :
DRAM chips; X-ray diffraction; ferroelectric storage; ferroelectric thin films; heat treatment; sol-gel processing; strontium compounds; 500 to 800 C; Si; Si substrate; SiO2; SrTiO3; SrTiO3 thin films; X-ray diffraction analysis; amorphous structure; dynamic random access memory; ferroelectric perovskite; heat-treatment; perovskite phase; polycrystalline crack-free films; quartz substrate; sol-gel processing; strontium acetate; titanium tetrabutoxide; Amorphous materials; Crystallization; DRAM chips; Optical device fabrication; Scanning electron microscopy; Sputtering; Strontium; Temperature; Titanium; Transistors;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578192
