• DocumentCode
    3352099
  • Title

    Reversible suppression of Coulomb staircase in InP nanowires with light illumination

  • Author

    Yamada, Hidenori ; Yamada, Toshishige ; Lohn, Andrew J. ; Kobayashi, Nobuhiko P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., UC San Diego, La Jolla, CA, USA
  • fYear
    2010
  • fDate
    12-15 Oct. 2010
  • Firstpage
    304
  • Lastpage
    305
  • Abstract
    Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n+-silicon electrodes. The current-voltage (I-V) characteristics exhibit a staircase in dark with a period of ~ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny island within contributing nanowires. Electrons tunnel in and out of the island, resulting in the Coulomb staircase I-V. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.
  • Keywords
    Coulomb blockade; Fermi level; III-V semiconductors; electron transport theory; indium compounds; nanowires; tunnelling; Coulomb staircase; InP; electron quasi-Fermi level; electron transport analysis; light illumination; nanowires; reversible suppression; temperature 293 K to 298 K; tunneling barriers; Electrodes; Indium phosphide; Lighting; Logic gates; Nanowires; Photoconducting materials; Tunneling; Coulomb staircase; InP nanowire; illumination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-8896-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2010.5652579
  • Filename
    5652579