DocumentCode :
3352099
Title :
Reversible suppression of Coulomb staircase in InP nanowires with light illumination
Author :
Yamada, Hidenori ; Yamada, Toshishige ; Lohn, Andrew J. ; Kobayashi, Nobuhiko P.
Author_Institution :
Dept. of Electr. & Comput. Eng., UC San Diego, La Jolla, CA, USA
fYear :
2010
fDate :
12-15 Oct. 2010
Firstpage :
304
Lastpage :
305
Abstract :
Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n+-silicon electrodes. The current-voltage (I-V) characteristics exhibit a staircase in dark with a period of ~ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny island within contributing nanowires. Electrons tunnel in and out of the island, resulting in the Coulomb staircase I-V. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.
Keywords :
Coulomb blockade; Fermi level; III-V semiconductors; electron transport theory; indium compounds; nanowires; tunnelling; Coulomb staircase; InP; electron quasi-Fermi level; electron transport analysis; light illumination; nanowires; reversible suppression; temperature 293 K to 298 K; tunneling barriers; Electrodes; Indium phosphide; Lighting; Logic gates; Nanowires; Photoconducting materials; Tunneling; Coulomb staircase; InP nanowire; illumination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
Type :
conf
DOI :
10.1109/NMDC.2010.5652579
Filename :
5652579
Link To Document :
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