Title :
A novel process for preparing PZT thick films
Author :
Ding, A.L. ; He, X.Y. ; Qui, P.S. ; Wang, S.J. ; Luo, W.G. ; Chan, H.L.W. ; Wang, P. ; Choy, C.L.
Author_Institution :
Lab. of Function Inorg. Mater., Acad. Sinica, Shanghai, China
Abstract :
A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefore uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5 μm thickness has a large remanent polarization of 44 μC/cm2, small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively
Keywords :
dielectric losses; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; spin coating; 3.5 micron; PZT; PZT thick films; PbZrO3TiO3; coercive field; dielectric constant; dielectric loss tanδ; ferroelectric films; hydrolytic product; remanent polarization; uniform properties; Ceramics; Dielectric losses; Ferroelectric films; Heat treatment; Lead; Optical films; Piezoelectric films; Powders; Thick films; Titanium;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941610
