• DocumentCode
    3352257
  • Title

    Chemical surface modification on SiO2 electret by DCDMS

  • Author

    Huamao, Lin ; Hongyan, Zhang ; Zhongfu, XIA ; Shaoqun, Shen ; Jianwei, Zhu

  • Author_Institution
    Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    700
  • Lastpage
    705
  • Abstract
    In this paper, an advanced study on the chemical surface modification by dichlorodimethylsilane (DCDMS) was carried out. Different cleaning processes were tried to improve the surface state of the SiO2 film after chemical surface treatment by DCDMS. The stability of the space charges stored in these samples was investigated and the surface components of the samples were analyzed
  • Keywords
    dielectric thin films; electrets; organic compounds; silicon compounds; space charge; surface conductivity; surface potential; surface structure; surface treatment; ultrasonic cleaning; SiO2; SiO2 electret; SiO2 film; chemical surface modification; cleaning processes; dichlorodimethylsilane; negative corona charging; space charge stability; surface components; surface conductivity; surface potential decay curves; surface state; ultrasonic cleaning; Absorption; Chemicals; Cleaning; Conductive films; Electrets; Humidity; Solid state circuits; Space charge; Surface treatment; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578194
  • Filename
    578194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3352257