• DocumentCode
    3352410
  • Title

    C-V characteristics of SiO2 thin films prepared by sol-gel method

  • Author

    Liu, Yun ; Zhai, Jiwei ; Ying, Mingzi ; Zhang, Liangying ; Yao, Xi

  • Author_Institution
    Lab. of Electron. Mater. Res., Xi´´an Jiaotong Univ., China
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    706
  • Lastpage
    709
  • Abstract
    SiO2 thin films were prepared by the sol-gel method. The electrical characteristics of MOS structures with multilayer SiO2 films were measured by means of a high frequency Capacitance-Voltage (C-V) method. Experiments show that there are many mobile ions and negative charge centers in SiO2 films. The flat-band voltage VFD shifts toward the positive side with increasing SiO2 film porosity
  • Keywords
    MIS structures; capacitance; insulating thin films; porosity; silicon compounds; sol-gel processing; C-V characteristics; MOS structures; Si-SiO2; SiO2; SiO2 film porosity; SiO2 thin films; electrical characteristics; flat-band voltage shift; high frequency capacitance-voltage method; mobile ions; multilayer SiO2 films; negative charge centers; sol-gel method; spin coating; Capacitance-voltage characteristics; Conductive films; Dielectric loss measurement; Optical films; Polymer films; Semiconductor films; Substrates; Thermal conductivity; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578195
  • Filename
    578195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3352410