DocumentCode :
3352482
Title :
In-situ plasma cleaning by rotating transverse magnetic field
Author :
Kawasima, T. ; Bannai, S. ; Chiba, T. ; Honbori, I. ; Kisakibaru, T.
Author_Institution :
Manuf. Sci. Div., Sony Corp., Kanagawa, Japan
fYear :
1995
fDate :
17-19 Sep 1995
Firstpage :
32
Lastpage :
35
Abstract :
In the new type of method, the rotating transverse magnetic field is added to the plasma by magnetic coils set around the chamber. Ions and radicals are forcibly pulled out from the plasma up to the inner surface of the chamber by the above magnetic field. In this method, the amount and the energy of ions and radicals can be controlled by the magnetic field intensity so as to be effective in removing the residual product. The etching rate on the inner surface gradually increases in proportion to the magnetic field intensity and becomes larger than that on the electrode at 600 Gauss
Keywords :
integrated circuit technology; integrated circuit yield; sputter etching; surface cleaning; 600 gauss; IC production; etching rate; in-situ plasma cleaning; inner surface; magnetic coils; magnetic field intensity; residual product; rotating transverse magnetic field; Cleaning; Coils; Electrodes; Etching; Frequency; Magnetic fields; Magnetic semiconductors; Plasma applications; Plasma materials processing; Semiconductor device manufacture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
Type :
conf
DOI :
10.1109/ISSM.1995.524353
Filename :
524353
Link To Document :
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