• DocumentCode
    3352482
  • Title

    In-situ plasma cleaning by rotating transverse magnetic field

  • Author

    Kawasima, T. ; Bannai, S. ; Chiba, T. ; Honbori, I. ; Kisakibaru, T.

  • Author_Institution
    Manuf. Sci. Div., Sony Corp., Kanagawa, Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    32
  • Lastpage
    35
  • Abstract
    In the new type of method, the rotating transverse magnetic field is added to the plasma by magnetic coils set around the chamber. Ions and radicals are forcibly pulled out from the plasma up to the inner surface of the chamber by the above magnetic field. In this method, the amount and the energy of ions and radicals can be controlled by the magnetic field intensity so as to be effective in removing the residual product. The etching rate on the inner surface gradually increases in proportion to the magnetic field intensity and becomes larger than that on the electrode at 600 Gauss
  • Keywords
    integrated circuit technology; integrated circuit yield; sputter etching; surface cleaning; 600 gauss; IC production; etching rate; in-situ plasma cleaning; inner surface; magnetic coils; magnetic field intensity; residual product; rotating transverse magnetic field; Cleaning; Coils; Electrodes; Etching; Frequency; Magnetic fields; Magnetic semiconductors; Plasma applications; Plasma materials processing; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524353
  • Filename
    524353