Title :
Control of Si surface characteristics by a new etching solution BHF/H2O2
Author :
Muramatsu, Yoshinorii ; Tsuji, Mikio ; Aoto, Nahomi
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
Abstract :
We propose a new buffered hydrofluoric acid (BHF) based solution without surfactants, BHF/H2O2, for Si oxide etching. The BHF/H2O2 solution is an application of the FPM (hydrofluoric acid-hydrogen peroxide mixture) technique reported by Shimono and Tsuiji (1991). By using BHF/H2O2 , low microroughness and high wettability to Si surfaces are achieved without adding any surfactants
Keywords :
elemental semiconductors; etching; silicon; surface topography; wetting; BHF/H2O2 solution; FPM technique; H2O2; HF; Si; Si surface; buffered hydrofluoric acid; hydrofluoric acid hydrogen peroxide mixture; microroughness; oxide; wet etching; wettability; Additives; Atomic measurements; Force measurement; Hafnium; Pollution measurement; Surface contamination; Surface morphology; Surface treatment; Very large scale integration; Wet etching;
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
DOI :
10.1109/ISSM.1995.524356
