• DocumentCode
    3352524
  • Title

    Control of Si surface characteristics by a new etching solution BHF/H2O2

  • Author

    Muramatsu, Yoshinorii ; Tsuji, Mikio ; Aoto, Nahomi

  • Author_Institution
    ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    We propose a new buffered hydrofluoric acid (BHF) based solution without surfactants, BHF/H2O2, for Si oxide etching. The BHF/H2O2 solution is an application of the FPM (hydrofluoric acid-hydrogen peroxide mixture) technique reported by Shimono and Tsuiji (1991). By using BHF/H2O2 , low microroughness and high wettability to Si surfaces are achieved without adding any surfactants
  • Keywords
    elemental semiconductors; etching; silicon; surface topography; wetting; BHF/H2O2 solution; FPM technique; H2O2; HF; Si; Si surface; buffered hydrofluoric acid; hydrofluoric acid hydrogen peroxide mixture; microroughness; oxide; wet etching; wettability; Additives; Atomic measurements; Force measurement; Hafnium; Pollution measurement; Surface contamination; Surface morphology; Surface treatment; Very large scale integration; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524356
  • Filename
    524356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3352524