DocumentCode
3352530
Title
Structure and grain-size distribution of TiO2/SiO2 thin film
Author
Jiwei, Zhai ; Lingbing, Kong ; Liangying, Zhang ; Xi, Yao
Author_Institution
Lab. of Electron. Mater. Res., Xi´´an Jiaotong Univ., China
fYear
1996
fDate
25-30 Sep 1996
Firstpage
710
Lastpage
713
Abstract
The structure and crystal grain size distribution along the thickness of TiO2/SiO2 thin films prepared by the sol-gel process under various heat treatment temperatures were studied. The X-ray diffraction spectra demonstrate that the crystallization temperature of anatase is 660°C for 50TiO2/50SiO2 thin-films. At 900°C tridymite-M and rutile structures appeared. The anatase-rutile transformation temperature is 950°C. DTA curves show that the structural transformation of TiO2 is a gradual process. X-ray glancing incidence analysis indicates that the crystal grain size decreases along the thickness of the thin-film. With increasing heat treatment temperature, the difference of crystal grain size along the thickness is enhanced
Keywords
X-ray diffraction; grain size; heat treatment; optical films; silicon compounds; sol-gel processing; solid-state phase transformations; thermal analysis; titanium compounds; 660 C; 900 C; 950 C; DTA curves; TiO2-SiO2; TiO2/SiO2 thin films; X-ray diffraction spectra; X-ray glancing incidence analysis; anatase; anatase-rutile transformation temperature; crystallization temperature; film structure; grain-size distribution; heat treatment temperature; optical quality films; rutile structure; sol-gel process; structural transformation; tridymite-M structure; Coatings; Crystalline materials; Crystallization; Grain size; Optical films; Plasma temperature; Temperature distribution; Thick films; Transistors; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578196
Filename
578196
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