Title :
Design of An Ultra Wideband Transmitter in 0.18μm 3D Silicon on Insulator CMOS
Author :
Zhang, Zhaonian ; Andreou, Andreas G.
Author_Institution :
Johns Hopkins Univ., Baltimore
Abstract :
The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.
Keywords :
CMOS integrated circuits; dipole antennas; integrated circuit design; low-power electronics; radio transmitters; silicon-on-insulator; ultra wideband antennas; 3D silicon on insulator CMOS wafer integration; frequency 960 MHz; low-power integrated circuit; ominidirectional dipole antenna; size 0.18 μm; ultra wideband transmitter fabrication; Bandwidth; CMOS technology; Dipole antennas; Frequency; High performance computing; Integrated circuit interconnections; Integrated circuit technology; Silicon on insulator technology; Transmitters; Ultra wideband technology;
Conference_Titel :
Information Sciences and Systems, 2007. CISS '07. 41st Annual Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-4244-1063-3
Electronic_ISBN :
1-4244-1037-1
DOI :
10.1109/CISS.2007.4298407
