Application of surface photovoltage method to in-line monitoring of metallic contamination in a manufacturing environment

Author

Nakao, Kazuhiro ; Matsuda, Yasushi ; Inomaki, Yoshihiro ; Mizukami, Koichiro ; Enomoto, Minoru

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

17-19 Sep 1995

Firstpage

64

Lastpage

67

Abstract

We investigated the correlation between junction degradation of bipolar transistors and heavy metal contamination using the SPV (Surface Photovoltage) method, and found Fe contamination was the main cause of collector-emitter shorts. It was revealed that the source of Fe atoms was a contaminated Si₃N₄ film by using the SPV method to analyze contamination levels of equipment. In this regard, the SPV method has proven to be a highly efficient monitoring tool for heavy metal contamination in a manufacturing environment

Keywords

bipolar transistors; photovoltaic effects; semiconductor technology; surface contamination; Fe atoms; Si₃N₄ film; Si₃N₄:Fe; bipolar transistors; collector-emitter shorts; heavy metal contamination; in-line monitoring; junction degradation; manufacturing; surface photovoltage; Bipolar transistors; Iron; Large scale integration; Manufacturing; Monitoring; Optical surface waves; Pollution measurement; Surface contamination; Surface waves; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on

Conference_Location

Austin, TX

Print_ISBN

0-7803-2928-7

Type

conf

DOI

10.1109/ISSM.1995.524361

Filename

524361