Title :
Application of surface photovoltage method to in-line monitoring of metallic contamination in a manufacturing environment
Author :
Nakao, Kazuhiro ; Matsuda, Yasushi ; Inomaki, Yoshihiro ; Mizukami, Koichiro ; Enomoto, Minoru
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
We investigated the correlation between junction degradation of bipolar transistors and heavy metal contamination using the SPV (Surface Photovoltage) method, and found Fe contamination was the main cause of collector-emitter shorts. It was revealed that the source of Fe atoms was a contaminated Si3N4 film by using the SPV method to analyze contamination levels of equipment. In this regard, the SPV method has proven to be a highly efficient monitoring tool for heavy metal contamination in a manufacturing environment
Keywords :
bipolar transistors; photovoltaic effects; semiconductor technology; surface contamination; Fe atoms; Si3N4 film; Si3N4:Fe; bipolar transistors; collector-emitter shorts; heavy metal contamination; in-line monitoring; junction degradation; manufacturing; surface photovoltage; Bipolar transistors; Iron; Large scale integration; Manufacturing; Monitoring; Optical surface waves; Pollution measurement; Surface contamination; Surface waves; Wavelength measurement;
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
DOI :
10.1109/ISSM.1995.524361
