Title :
Pulsed laser deposition of highly ⟨001⟩ oriented (Pb,La)TiO3 thin films on (001) LaAlO3 substrates
Author :
Xiong, S.B. ; Liu, Z.G. ; Chen, Xiao Yuan ; Ye, Z.M. ; Guo, X.L. ; Hu, W.S.
Author_Institution :
Lab. of Solid State Microstructures, Nanjing Univ., China
Abstract :
Ferroelectric Pb0.90La0.10TiO3 (PLT10) thin films have been prepared on (001) LaAlO3 (LAO) and on Pt coated (100) Si (Pt/Si) substrates using pulsed laser deposition (PLD). X-ray 0-20 scan and scanning electron microscopy (SEM) were used to analyze the film structure and morphology, respectively. Energy dispersive X-ray analysis (EDAX) was employed to probe the stoichiometry of the as deposited films. The ferroelectric P-E hysteresis loop was demonstrated by using a modified Sawyer-Tower circuit and the frequency dependence of the dielectric constant was measured by using an inductance-capacitance-resistance (LCR) analyzer. The effect of the dielectric buffer layer in the film on the P-E hysteresis loop was discussed
Keywords :
X-ray chemical analysis; X-ray diffraction; dielectric hysteresis; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; pulsed laser deposition; scanning electron microscopy; stoichiometry; (001) LaAlO3 substrates; LCR analyzer; LaAlO3; Pb0.90La0.10TiO3; Pt coated (100) Si substrates; Pt-Si; Si; X-ray 0-20 scan; dielectric buffer layer; dielectric constant; energy dispersive X-ray analysis; ferroelectric Pb0.90La0.10TiO3 thin films; ferroelectric hysteresis loop; film morphology; film structure; frequency dependence; highly ⟨001⟩ oriented (Pb,La)TiO3 thin films; modified Sawyer-Tower circuit; pulsed laser deposition; scanning electron microscopy; stoichiometry; Ferroelectric films; Ferroelectric materials; Hysteresis; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Semiconductor thin films; Sputtering; Substrates; X-ray lasers;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578197
