Title :
The influence of tungsten contamination on electrical characteristics of MOS devices in semiconductor processing
Author :
Kawahara, Wiroyuki ; Yoneda, Kenji ; Oishi, Hiroshi ; Todokoro, Yoshihiro
Author_Institution :
Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
Abstract :
The elimination of dedicated process equipment for silicide brings major benefits on equipment investment and pulsation-less production. To achieve the elimination of silicide dedicated process equipments, the influence and criteria of silicide-metal contamination on the electrical characteristics of ULSI MOS devices should be clarified. In this paper, we investigated the influence and criteria of W contamination on the dielectric breakdown reliability and P-N junction leakage current of MOS devices. In addition, feasibility study for common use of equipment such as furnace, wet cleaning, LP-CVD and plasma etcher is discussed
Keywords :
MOS integrated circuits; ULSI; chemical vapour deposition; electric breakdown; integrated circuit metallisation; integrated circuit reliability; leakage currents; sputter etching; surface cleaning; CVD; MOS devices; P-N junction leakage current; ULSI; dielectric breakdown reliability; electrical characteristics; furnace; plasma etcher; semiconductor processing; silicide-metal contamination; wet cleaning; Contamination; Dielectric breakdown; Electric variables; Investments; MOS devices; P-n junctions; Production; Silicides; Tungsten; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
DOI :
10.1109/ISSM.1995.524375
