DocumentCode :
3352748
Title :
Overview of silicon pixel sensor development for the ATLAS insertable B-layer (IBL)
Author :
Grinstein, S.
Author_Institution :
Inst. de Fasica d´´Altes Energies (IFAE), Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
1986
Lastpage :
1991
Abstract :
The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of 5 × 1015 neq/cm2. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.
Keywords :
particle tracks; position sensitive particle detectors; radiation effects; silicon radiation detectors; 3D double sided design; ATLAS ATLAS tracking system; ATLAS insertable B-layer; LHC; beam test study; detector characterization; irradiation effect; luminosity; planar n-on-n slim edge design; radiation dose; reduced diameter beam pipe; safety factor; sensor technology; silicon pixel sensor development; track reconstruction; tracking performance; vertex reconstruction; Lead; Neutrons; Three dimensional displays; 3D pixels; ATLAS upgrade; high energy physics; pixel detectors; radiation hardness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154405
Filename :
6154405
Link To Document :
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