DocumentCode
3352748
Title
Overview of silicon pixel sensor development for the ATLAS insertable B-layer (IBL)
Author
Grinstein, S.
Author_Institution
Inst. de Fasica d´´Altes Energies (IFAE), Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
fYear
2011
fDate
23-29 Oct. 2011
Firstpage
1986
Lastpage
1991
Abstract
The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of 5 × 1015 neq/cm2. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.
Keywords
particle tracks; position sensitive particle detectors; radiation effects; silicon radiation detectors; 3D double sided design; ATLAS ATLAS tracking system; ATLAS insertable B-layer; LHC; beam test study; detector characterization; irradiation effect; luminosity; planar n-on-n slim edge design; radiation dose; reduced diameter beam pipe; safety factor; sensor technology; silicon pixel sensor development; track reconstruction; tracking performance; vertex reconstruction; Lead; Neutrons; Three dimensional displays; 3D pixels; ATLAS upgrade; high energy physics; pixel detectors; radiation hardness;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location
Valencia
ISSN
1082-3654
Print_ISBN
978-1-4673-0118-3
Type
conf
DOI
10.1109/NSSMIC.2011.6154405
Filename
6154405
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