DocumentCode :
3352780
Title :
Contamination issues in gas delivery to a gate oxide process
Author :
Krishnan, Sowmya ; Laparra, Olivier ; Tudhope, Andrew
Author_Institution :
Ultra Clean Technol., Menlo Park, CA, USA
fYear :
1995
fDate :
17-19 Sep 1995
Firstpage :
146
Lastpage :
150
Abstract :
The contamination contributed by a conventional gas manifold and associated interconnects delivering process gases to a gate oxidation furnace was compared to that contributed by an ultraclean manifold. Additionally, the extent of corrosion by HCl on conventional and ultraclean tubing, welded using conventional and ultraclean welding techniques respectively, was investigated
Keywords :
corrosion; impurities; oxidation; semiconductor technology; surface contamination; HCl; contamination; corrosion; gas delivery system; gas manifold; gate oxidation furnace; interconnects; semiconductor manufacturing; tubing; ultraclean processing; welding; Chemical processes; Chemical technology; Furnaces; Gases; Impurities; Moisture; Oxidation; Surface contamination; Valves; Welding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
Type :
conf
DOI :
10.1109/ISSM.1995.524378
Filename :
524378
Link To Document :
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